View 2SC5363_276583.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Transistor
2SC5363
Silicon NPN epitaxial planar type
For low-voltage high-frequency amplification
Unit: mm
0.2+0.1 -0.05 0.15+0.1 -0.05
q
1 (0.5) (0.5) 1.00.1 1.60.1 5
2
(0.4)
(0.3)
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
0 to 0.1 0.450.1
Ratings 9 6 2 30 125 125 -55 ~ +125
Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SSMini3-G1 Package
Marking symbol : 3Y
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Foward transfer gain Noise figure
(Ta=25C)
Symbol ICBO IEBO hFE Cob fT | S21e |2 NF Conditions VCB = 5V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, IC = 10mA VCB = 3V, IE = 0, f = 1MHz VCE = 3V, IC = 10mA, f = 1.5GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 200 0.7 pF GHz dB dB Unit A A
0.750.15
0.20.1
q
0.80.1 1.60.15
q
High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1
s Features
3
Publication date: May 2002
SJC00179BED
1
Transistor
PC -- Ta
150 60 Ta=25C 125 50 25
2SC5363
IC -- VCE
30 VCE=3V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
Collector current IC (mA)
100
40
IB=600A 500A
20 Ta=75C 15
25C -25C
75
30 400A 20 300A 200A 10 100A
50
10
25
5
0 0 20 40 60 80 100 120 140 160
0 0 1 2 3 4 5 6
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 0.1 25C -25C IC/IB=10 120
hFE -- IC
1000 VCE=3V 300 100 30 10 3 1 0.3 0 0.1 0.1 0.1
fT -- IC
VCE=3V f=1.5GHz
Forward current transfer ratio hFE
100 Ta=75C 80 25C 60 -25C 40
20
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Transition frequency fT (GHz)
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
| S21e |2 -- IC
12 4.8
NF -- IC
1.2
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=0.3V f=900MHz IE=0 f=1MHz Ta=25C
Forward transfer gain |S21e|2 (dB)
VCE=0.3V f=900MHz 10 4.0
1.0
8
Noise figure NF (dB)
3.2
0.8
6
2.4
0.6
4
1.6
0.4
2
0.8
0.2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.3 1 3 10 1 3 10 30 100
Collector current IC (mA)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00179BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

▲Up To Search▲

Price & Availability of 2SC5363

	To Download 2SC5363 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .